maximum ratings c ollec t or-emitt er v oltage c ollec t or-b ase v oltage c ollec t or c ur r en t-c on tinuous symbol v ceo v cbo v ebo i c v alue -25 -30 -5 unit v v v a -0.8 rating maximum power dissipation total power dissipation (ta=25c) junction temperature characteristics t j p d symbol max 300 150 unit mw c c thermal characteristics characteristics symbol min max unit electrical characteristics (t a =25c unless otherwise noted) v (br)ceo v (br)cbo v (br)ebo i cbo i ebo -0.1 -0.1 v v v a a off characteristics BC808 1 2 3 base collect or emitter sot -23 -25 -30 -5 - - - - - 1 2 3 weitron http://www.weitron.com.tw 1/4 09-jul-07 emitter-base voltage storage temperature t stg -65 -150 collector-emitter breakdownvoltage (i c =-10ma, i b =0) collector-base breakdown voltage (i c =-100 a, i e =0) emitter-base breakdown voltage (i e =-100 a, i c =0) collect cut-o current (v cb = -25v, i e =0) emitte cut-o current (v eb =-4v, i c =0) le a d( p b)- f r ee p b pnp transistor surface mount features: * suitable for af-driver stages and low power output stages * complement to bc818
transition frequency (v ce = -5v, i c =-10ma, f=50mhz) f t 100 16 100-250 5e 25 160-400 5f 40 250-630 5g - - - - mhz dc c u r r e n t g ain c olle c t or output capacitance (v cb = -10 v, i e =0, f=1 mhz) c ob 12 - - pf c olle c t or-emit t er s a tu r a tion v oltage (i c = -500m a , i b = -50m a ) b ase-emit t er v oltage h fe(1) h fe(2) v ce(sat) v be - - - v 100 60 630 - - v - 0.7 on characteristics electrical characteristics (t a =25?c unless otherwise noted) (countinued) characteristics symbol unit min typ max -1.2 - BC808 weitron http://www.weitron.com.tw 2/4 09-jul-07 (v ce =-1v, i c = -100m a ) (v ce =-1v, i c = -300m a ) classification of h fe rank range h ft(1) marking (v ce =-1v, i c = -300m a )
BC808 weitron http://www .weitron.com.tw 3/4 09-jul-07 characteristics curve i e = - 5.0ma i e = - 4.5ma i e = - 4.0ma i e = - 3.5ma i e = - 2.5ma i e = - 3.0ma i e = - 2.0ma i e = - 1.5ma i e = - 80a i e = - 70a i e = - 60a i e = - 50a i e = - 40a i e = - 30a i e = - 20a i e = - 10a i e = 0a p r = 600mw p r =600mw i e = - 1.0ma i e = - 0.5ma i e = 0 -0 -1 -2 -3 -4 -5 -500 -400 -300 -200 -100 -0 -0 -10 -20 -30 -40 -50 -20 -16 -12 -8 -4 -0 v ce [v], collector-emitter voltage figure 1. static characteristic i c [ma],collector current -0.1 -1 -10 -100 -1000 1000 100 10 1 i c [ma], collector current figure 3. dc current gain i c [ma], collector current figure 4. base-emitter saturation voltage collector-emitter saturation voltage h fe , dc current gain v be (sat), v ce (sat)[v], saturation voltage v ce [v], collector-emitter voltage figure 2. static characteristic i c [ma],collector current pulse v ce = - 2.0v - 1.0v -0.4 -0.5 -0.7 -0.6 -0.8 -0.9 -1000 -100 -10 -0.1 -1 v be [v], base-emitter voltage figure 5. ease-emitter on voltage i c [ma] collector current pulse v ce = - 1v -0.1 -1 -10 -100 -1000 -10 -1 -0.1 -0.01 pulse v ce (sat) v ce (sat) i c = 101 e -0.1 -10 -1 -100 100 10 1 v ce [v], collector-base voltage v be [v], emitter-base voltage figure 6. input output capacitance c o , cob[pf], capacitance f = 1.0mhz c ob c ob
characteristics curve v ce = - 5.0v -0 -10 -100 1000 100 10 i c [ma], collector current figure 7. current gain bandwidth product f t [mhz], gain bandwidth product BC808 weitron http://www .weitron.com.tw 4/4 09-jul-07
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